FW356 no.7743-1/6 features ? for motor drives, inverters. ? the FW356 in corporates a n-channel mosfet and a p-channel mosfet that feature low on-resistance, ultrahigh-speed switching, and 4v drive, thereby enabling high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 60 --60 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 5 --3.5 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 14 --14 a allowable power dissipation p d mounted on a ceramic board 2.0 w (1200mm 2 5 0.8mm)1unit, pw 10s total dissipation p t mounted on a ceramic board 2.3 w (1200mm 2 5 0.8mm), pw 10s channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =3a 4 6 s 5r ds (on)1 i d =3a, v gs =10v 43 58 m w static drain-to-source on-state resistance r ds (on)2 i d =3a, v gs =4v 56 84 m w input capacitance ciss v ds =20v, f=1mhz 790 pf output capacitance coss v ds =20v, f=1mhz 115 pf reverse transfer capacitance crss v ds =20v, f=1mhz 88 pf continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7743 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 22004pa ts im ta-101068 FW356 n-channel and p-channel silicon mosfets general-purpose switching device applications
FW356 no.7743-2/6 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 10 ns rise time t r see specified test circuit. 22 ns turn-off delay time t d (off) see specified test circuit. 74 ns fall time t f see specified test circuit. 48 ns total gate charge qg v ds =30v, v gs =10v, i d =5a 16 nc gate-to-source charge qgs v ds =30v, v gs =10v, i d =5a 4 nc gate-to-drain miller charge qgd v ds =30v, v gs =10v, i d =5a 3.4 nc diode forward voltage v sd i s =5a, v gs =0 0.86 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--2a 3 4.6 s r ds (on)1 i d =--2a, v gs =--10v 110 145 m w static drain-to-source on-state resistance r ds (on)2 i d =--2a, v gs =--4v 150 210 m w input capacitance ciss v ds =--20v, f=1mhz 990 pf output capacitance coss v ds =--20v, f=1mhz 110 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 76 pf turn-on delay time t d (on) see specified test circuit. 12 ns rise time t r see specified test circuit. 50 ns turn-off delay time t d (off) see specified test circuit. 100 ns fall time t f see specified test circuit. 65 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--3.5a 22 nc gate-to-source charge qgs v ds =--30v, v gs =--10v, i d =--3.5a 4 nc gate-to-drain miller charge qgd v ds =--30v, v gs =--10v, i d =--3.5a 4 nc diode forward voltage v sd i s =--3.5a, v gs =0 --0.86 --1.2 v marking : w356 package dimensions electrical connection unit : mm 2129 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 14 5 8 4.4 0.3 6.0 0.2 5.0 0.595 1.27 1.5 0.1 1.8max 0.43 8765 1234 top view 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1
FW356 no.7743-3/6 switching time test circuit [n-channel] [p-channel] pw=10 m s d.c. 1% p. g 50 w g s d i d =3a r l =10 w v dd =30v v out FW356 v in 10v 0v v in pw=10 m s d.c. 1% p. g 50 w g s d i d = --2a r l =15 w v dd = --30v v out FW356 v in 0v --10v v in gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a drain current, i d -- a forward transfer admittance, ? y fs ? -- s static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v diode forward voltage, v sd -- v forward current, i f -- a ambient temperature, ta -- c it06074 0.6 0.8 0.4 1.0 1.2 i f -- v sd it06073 0.01 1.0 0.1 23 57 23 57 1.0 23 57 10 7 5 3 2 0.1 5 7 3 2 10 ? y fs ? -- i d 0.2 0.01 10 1.0 0.1 7 5 3 2 7 5 3 2 7 5 3 2 v gs =0 v ds =10v ta= --25 c 75 c 25 c ta=75 c 25 c --25 c 02468 40 50 60 70 30 80 90 100 110 120 130 140 150 20 40 50 60 70 20 30 80 90 100 110 120 10 12 10 14 16 r ds (on) -- v gs it06071 r ds (on) -- ta it06072 --60 --40 --20 0 20 40 60 80 100 120 160 140 ta=25 c i d =3a i d =3a, v gs =4v i d =3a, v gs =10v 0 0 2.0 2.5 5.0 4.0 4.5 3.5 3.0 0.2 0.3 0.1 1.0 1.5 0.5 0 5 3 10 7 9 4 2 6 8 1 1.0 0.7 0.8 0.9 0.6 i d -- v ds it06069 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d -- v gs it06070 v ds =10v ta=75 c 75 c --25 c ta= --25 c 0.4 0.5 v gs =3.0v 4.0v 3.5v 5.0v 10.0v 8.0v 6.0v 25 c 25 c [nch] [nch] [nch] [nch] [nch] [nch]
FW356 no.7743-4/6 total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c 0 0 8 7 9 20 16 14 18 12 10 4 28 6 10 2 1 4 3 6 5 v gs -- qg it06077 v ds =30v i d =5a [nch] 0 --2 --4 --6 --8 50 200 250 300 350 100 150 400 450 500 0 --12 --10 --14 --16 r ds (on) -- v gs it06081 0 --0.2 --0.3 --0.1 0 --2.0 --2.5 --3.5 --3.0 --1.0 --1.5 --0.5 0 -- 3 -- 2 -- 4 -- 5 -- 7 -- 6 -- 1 --1.0 --0.8 --0.9 --0.6 --0.7 i d -- v ds it06079 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 i d -- v gs it06080 r ds (on) -- ta it06082 --60 --40 --20 0 20 40 60 80 100 120 160 140 v ds = --10v ta=75 c 25 c --25 c --0.4 --0.5 v gs = --3.0v --3.5v --4.0v --5.0v --10.0v --8.0v --6.0v ta=25 c i d = --2a 100 50 150 200 250 300 0 i d = -- 2 a, v gs = -- 4v i d = --2a, v gs = --10v [pch] [pch] [pch] [pch] [nch] a s o 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 23 57 23 57 0.1 1.0 10 23 57 100 it06078 100 m s dc operation(pw 10s) 1ms 100ms 10ms i d =5a i dp =14a operation in this area is limited by r ds (on). ta=25 c single pulse mounted on a ceramic board(1200mm 2 5 0.8mm) 1unit drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf 060 20 30 40 50 10 ciss, coss, crss -- v ds it06076 100 2 0.1 1.0 23 57 10 23 5 7 2 10 3 5 2 7 3 5 7 3 1000 3 2 100 3 5 2 7 5 7 3 sw time -- i d it06075 v dd =30v v gs =10v t f t r t d (off) t d (on) crss coss ciss f=1mhz [nch] [nch]
FW356 no.7743-5/6 allowable power dissipation(fet 2), p d -- w allowable power dissipation(fet 1), p d -- w [nch, pch] [nch, pch] ambient temperature, ta -- c allowable power dissipation, p d -- w total gate charge, qg -- nc drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a dc operation(pw 10s) --30 --40 --20 --50 --60 --10 0 2 3 1000 100 7 5 3 7 5 3 2 2 5 3 100 10 7 7 5 3 2 2 ciss, coss, crss -- v ds it06086 --0.1 --1.0 23 57 --10 23 5 7 sw time -- i d it06085 v dd = --30v v gs = --10v t f t r t d (on) t d (off) crss coss ciss f=1mhz [pch] [pch] a s o --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 23 57 23 57 --0.1 --1.0 --10 23 57 --100 it06088 0 -- 8 -- 7 -- 9 030 25 10 520 15 --10 -- 2 -- 1 -- 4 -- 3 -- 6 -- 5 v gs -- qg it06087 operation in this area is limited by r ds (on). i dp = --14a i d = --3.5a 100 m s 1ms 100ms 10ms it06089 0 0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.8 1.6 1.4 1.2 1.0 0.6 0.4 0.2 0.8 2.4 2.2 2.0 2.0 2.2 2.4 p d (fet 1) -- p d (fet 2) v ds = --30v i d = --3.5a [pch] [pch] 0 0 20 40 60 80 100 120 1.5 1.0 0.5 2.5 2.0 2.3 140 160 p d -- ta it06090 1unit ta=25 c single pulse mounted on a ceramic board(1200mm 2 5 0.8mm) 1unit mounted on a ceramic board(1200mm 2 5 0.8mm), pw 10s total dissipation mounted on a ceramic board(1200mm 2 5 0.8mm), pw 10s drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a it06084 i f -- v sd it06083 --0.01 --0.1 23 57 --1.0 2357 23 57 --10 1.0 7 5 3 2 7 5 3 2 7 0.1 2 10 ? y fs ? -- i d --0.6 --0.8 --0.4 --1.0 --1.2 --0.2 --0.01 --10 --1.0 --0.1 7 5 3 2 7 5 3 2 7 5 3 2 v gs =0 v ds = --10v ta= --25 c 75 c 25 c ta=75 c 25 c --25 c [pch] [pch]
FW356 no.7743-6/6 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2004. specifications and information herein are subject to change without notice.
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